| PART |
Description |
Maker |
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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| SA57031-XX SA57031-25 SA57031-26 SA57031-31 SA5703 |
Micropower 150 mA, low-noise, low dropout linear regulator with on/off 微功耗为150 mA，低噪声，低压差线性稳压器的开/
RECTIFIER BRIDGE 25A 800V 300A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY
CAP CERAMIC MONO .1UF 50V 10%
Ceramic Multilayer Capacitor; Capacitance:22pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:1.2pF; Capacitance Tolerance: 0.5pF; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0603; Termination:SMD RoHS Compliant: Yes
Ceramic Multilayer Capacitor; Capacitance:1.5pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
Ceramic Multilayer Capacitor; Capacitance:1pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
|
TE Connectivity, Ltd.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IDT74FCT825BTSOB IDT74FCT825BTSO IDT74FCT825BTQB I |
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:60V; Package/Case:A; Terminal Type:Axial Leaded; ESR:15ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:14ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:14ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Tantalum Electrolytic Capacitor; Capacitance:0.33uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:50V; Package/Case:A; Terminal Type:Axial Leaded; ESR:15ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
CAP 0.82UF 50V 10% X7R SMD-1210 TR-7-PL SN-NIBAR
CAP 0.1UF 50V 10% X7R SMD-1805 TR-7-PL SN-NIBAR
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS FCT SERIES, 9-BIT DRIVER, TRUE OUTPUT, CDFP24
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| C1676 |
Approved for use with GlobeSpan HDSL2 Chip Set Meets the requirements of IEC60950 for supplementary insulation, 250V working voltage
|
Electronic Theatre Controls, Inc.
ETC[ETC]
CoEv Inc
|
| C2042 |
Analog Devices AD20MSP930 CPE Line Transformer Meet requirements of IEC60950 for supplementary insulation, 250V working voltage
|
CoEv Inc
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| ASS-ASC |
Surface Mount Auto Surge Suppressor Working Peak Reverse Voltage - 3 to Volts 10000 Watt Peak Pulse Power
|
StarHope
|
| MAZ8180 MAZ8110 MAZ8024 MAZ8300-H MAZ8300-L MAZ830 |
; Capacitance:33pF; Capacitance Tolerance: /- 1 %; Working Voltage, DC:150V; Package/Case:0605; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
; Capacitance:3.3pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:150V; Package/Case:0605; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
CAP POLYPROPYLENE .0013UF 50V 1%
Silicon planar type 27 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
.00015 UFD POLYPROPYLENE CAP 4.9 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Silicon planar type 33 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP POLYPROPYLENE .0012UF 50V 2%
|
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Electronic Theatre Controls, Inc.
Panasonic, Corp.
|
| DXTP03200BP5 DXTP03200BP5-13 DXTP03200BP5-15 |
200V PNP HIGH VOLTAGE TRANSISTOR PowerDI垄莽5
200V PNP HIGH VOLTAGE TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
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Analog Devices, Inc.
|
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
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ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| SGH30N60RUF SGH30N60RUFTU |
Discrete, Short Circuit Rated IGBT
Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
